The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jun. 03, 1997
Applicant:
Inventors:
Masakazu Kakumu, Yokohama, JP;
Masaaki Kinugawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257380 ; 257903 ; 257904 ;
Abstract
A plurality of silicon insulating films are formed to separate regions to be formed with elements from each other on a silicon semiconductor substrate. Silicon layers are formed by an epitaxially growing method on the regions to be formed with the elements and the silicon insulating film. An MOS transistor is formed on the monocrystalline silicon layer formed on the regions to be formed with the elements of the silicon layer, and the polysilicon layer formed on the silicon insulating film is used as a high resistance element or doped with an impurity as a conductor line.