The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Mar. 18, 1997
Tadao Isogai, Yokohama, JP;
Nikon Corporation, Tokyo, JP;
Abstract
Photoelectric conversion elements, each of which comprises a field effect transistor, are arranged in a two-dimensional matrix. The drain regions of the field effect transistors are continuously formed like a mesh so as to be commonly connected together in the row and column directions. Light-shielding drain shunt lines commonly connecting the drain regions of the field effect transistors along the column direction are formed at a rate of 1 line to a plurality of columns. Electrically floating light-shielding dummy lines having no connection to the drain regions of the field effect transistors are formed in the columns where no drain shunt lines are formed. Thus, high yield in manufacture is attained, while sensitivity is prevented from fluctuating.