The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Dec. 08, 1995
Jun-Ki Kim, Seoul, KR;
LG Semicon Co., Ltd., Choongchungbook-Do, KR;
Abstract
A method for fabricating wiring of a semiconductor device, which includes a first step for depositing an insulating film on a semiconductor substrate, and forming contact holes by selectively etching the insulating film, a second step for forming a barrier layer on the insulating film and the substrate, a third step for forming a first aluminum alloy layer on the barrier layer, a fourth step for forming a second aluminum alloy layer containing germanium on the first aluminum alloy layer, and a fifth step for forming an aluminum alloy wiring by annealing the substrate on which the first and the second aluminum alloy layers are formed, whereby making it possible to obtain the wiring of a semiconductor device capable of flowing at a low temperature which is the characteristic of Al--Ge wiring and capable of improving the characteristic of the electromigration of the wiring.