The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jun. 06, 1995
Applicant:
Inventors:
Jinsho Matsuyama, Nagahama, JP;
Yutaka Hirai, Hikone, JP;
Masao Ueki, Urayasu, JP;
Akira Sakai, Nagahama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 90 ; 117 95 ; 117105 ; 4272551 ;
Abstract
A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.