The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Nov. 01, 1995
Tatsuya Kunikiyo, Hyogo, JP;
Katsumi Eikyu, Hyogo, JP;
Kenichiro Sonoda, Hyogo, JP;
Masato Fujinaga, Hyogo, JP;
Kiyoshi Ishikawa, Hyogo, JP;
Norihiko Kotani, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device wherein the device is manufactured according to extracted process parameters. The process parameters are extracted as a set of optimum process parameters which satisfy an intended specification using process functions. The process functions describe a characteristic of the semiconductor device, and are determined using experimental values and/or simulated values. The process parameters may then be transmitted online to a factory.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile