The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
May. 12, 1997
Yasuaki Yoshida, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for simulating and analyzing two-dimensional current and light distributions of a semiconductor laser including an active layer, a cladding layer, and a light absorbing layer includes obtaining initial values of light distribution and carrier distribution, setting a bias condition, and performing current and light distribution analyses. The calculation of the initial value of the two-dimensional light distribution includes calculating a provisional absorption coefficient of the light absorbing layer from the refractive index of the cladding layer, the refractive index of the light absorbing layer, and the laser light wavelength; obtaining a solution in which the real part of the propagation constant of the wave equation is a maximum, using the provisional absorption coefficient; and repeating the calculation, using a sequential approximation method, until the absorption coefficient in the propagation constant equals the absorption coefficient in the original light absorbing layer. The propagation constant in the active layer is then larger than in a light absorbing region. Thus, the center of the light distribution is located in the active layer and the solution, specifying a laser oscillation mode, can be automatically derived without special judgment criteria.