The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Dec. 23, 1996
Applicant:
Inventor:
Yuji Hase, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257417 ; 257415 ; 438 52 ;
Abstract
A semiconductor acceleration sensor of a single integral type has a semiconductor substrate, a first nitride layer, a first poly-silicon layer, a second nitride layer, a second poly-silicon layer, a third nitride layer and a third poly-silicon layer which are fabricated in order. A movable section is formed in a part of the second poly-silicon layer placed in a cavity enclosed and sealed by the first nitride layer, the first poly-silicon layer, the second nitride layer, the second poly-silicon layer, the third nitride layer and the third poly-silicon layer. A fabrication method of the semiconductor acceleration sensor of a single integral type is also disclosed.