The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Sep. 24, 1997
Tatsuya Ohori, Kawasaki, JP;
Fujitsu Limited, Kanagawa, JP;
Abstract
A compound semiconductor device constructed on a heteroepitaxial substrate includes a silicon substrate, a first compound semiconductor layer of a first compound semiconductor material provided on the silicon substrate as a buffer layer, a second compound semiconductor layer of a second compound semiconductor material having a lattice constant larger than that of the first compound semiconductor layer, and an active device provided on the second compound semiconductor layer, wherein the second compound semiconductor layer has a thickness exceeding a critical thickness above which dislocations develop due to the misfit in the lattice constant between the first and second compound semiconductor layers.