The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Jun. 20, 1996
Kwang-Hoon Oh, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
An emitter switched thyristor has an enlarged safe operating range. A semiconductor substrate of a first conductivity type (a p-type) is provided and a semiconductor region of a second conductivity type (an n-type) is formed on the substrate. A well region of the first conductivity type is formed within the semiconductor region, and a plurality of well subregions of the second conductivity type are formed within the well region. The well subregions are all separated from each other by a separating portion of the well region. A plurality of electrode contacts are provided, including a gate electrode in contact with the well region and at least first and second cathode electrodes. The second cathode electrode is in contact with the separating portion of the well region.