The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Jun. 13, 1996
Applicant:
Inventors:
Assignees:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438738 ; 438736 ; 438740 ; 438743 ;
Abstract
A first semiconductor layer and a second semiconductor layer are laminated on a semiconductor wafer in that order. A resist pattern having an opening is formed on the second semiconductor layer. The second semiconductor layer is etched through the opening in the formed resist pattern to expose the first semiconductor layer. A surface oxide film is formed on the exposed surface of the first semiconductor layer and then selectively etched away. Alternatively, the exposed surface of the first semiconductor layer is subjected to a separate oxidization treatment and the resulting surface oxide film is selectively removed in the subsequent etching.