The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 1998

Filed:

Aug. 22, 1996
Applicant:
Inventors:

Atsushi Ando, Tokyo-to, JP;

Hitoshi Sunaoshi, Yokohama, JP;

Hirotsugu Wada, Tokyo-to, JP;

Kazuyoshi Sugihara, Yokosuka, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ; G03F / ;
U.S. Cl.
CPC ...
430 30 ; 430296 ; 430942 ; 25049222 ; 2503 / ; 250398 ;
Abstract

A method of evaluating a shaped beam generated by a charged beam writer, comprises the steps of: a first step of shaping line beams by dividing into 1/n one side of the shaped beam having a dimension 'a' in an x direction and a dimension 'b' in a y direction perpendicular to the x direction, where n is the number of divisions; a second step of irradiating the shaped line beam upon a surface of the sample or the movable stage for a constant time or longer; a third step of shaping a beam by adding a bias value .delta. to each line beam width in the divided direction; a fourth step of irradiating the line beam obtained by adding the bias value to the shaped line beam upon a photosensitive substance on the sample surface for a constant time for exposure; a fifth step of repeating the fourth step exposure (n-1) times by shifting the line beam obtained by adding the bias value to the line beam, in the direction that one side of the shaped beam is divided into 1/n, and developing the photosensitive substance, to obtain a pattern width .theta.; a sixth step of repeating the above first to fifth steps by changing the number of divisions n and the bias value .delta.; and a seventh step of obtaining a change rate .DELTA..theta./.DELTA.n of the pattern width .theta. relative to the number of divisions n for each bias value .delta., to obtain an offset drift rate on the basis of the obtained change rate and the bias value. The method can evaluate a beam offset drift rate between the set beam dimension and the actual beam dimension, so that a microscopic pattern can be formed at a high precision.


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