The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Mar. 05, 1997
Applicant:
Inventors:
Johnny C Chen, Cupertino, CA (US);
Chung K Chang, Santa Clara, CA (US);
Assignee:
Advanced Micro Devices, Inc., , US;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
36518511 ; 36518523 ; 36523004 ; 36523008 ;
Abstract
A non-volatile memory that allows simultaneous reading and writing operations by time multiplexing a single x-decode path between read and write operations. This is accomplished using appropriate timing signals to store/latch a first word line for a first operation and then relinquishing the x-decode path so that a second operation can load an address and access a second word line.
Quick Actions:
Chen, Johnny. (1998). Non-volatile memory enabling simultaneous reading and writing by time (U.S. Patent No. 5841696). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5841696
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile