The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Aug. 08, 1997
Koji Shibutani, Tokyo, JP;
Hideshi Maeno, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor memory in which integration is enhanced is provided. An NMOS transistor Qn1 has a gate connected to a write word line WWLn, a source connected to a write bit line WBLn, and a drain connected to a node N1. An NMOS transistor Qn2 has a gate connected to a read word line RWLn and a source connected to a read bit line RBLn. An NMOS transistor Qn3 has a gate connected to the drain of the NMOS transistor Qn1, a source connected to a ground level, and a drain connected to the drain of the NMOS transistor Qn2. An NMOS transistor Qn4 has a gate connected to a ground level, a source connected to the source of the NMOS transistor Qn3, and a drain connected to the drain of the NMOS transistor Qn1. The NMOS transistor Qn4 is kept off so that the drain of the NMOS transistor Qn1 is dielectrically isolated from the source of the NMOS transistor Qn3.