The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Jul. 25, 1996
Erich Bayer, Piflas, DE;
Konrad Wagensohner, Mauern, DE;
Abstract
A circuit arrangement 10 for driving an MOS field-effect transistor QO allocated to the supply circuit KO of an electrical load R.sub.L contains a charging circuit K1 and a discharging circuit K2, which can be alternatively connected to the MOS field-effect transistor QO. A sensing circuit K3 supplies the measuring signal S.sub.M typical of gate-source voltage U.sub.GS of the MOS field-effect transistor QO, via which the internal resistance of the charging or discharging circuit K1, K2 and/or a current I.sub.a impressed upon these circuits K1, K2, in the sense of a positive feedback, is controlled, in such a way that the resulting time constant, according to which the input capacitance of the MOS field-effect, transistor QO is charged or discharged, becomes smaller during the transition of the MOS field-effect transistor QO from the off state to the conductive state and larger during the transition from the conductive to the off-state.