The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Dec. 23, 1996
Hae Chang Yang, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
An SRAM semiconductor device is disclosed in which an access transistor is an nMOS TFT to thereby reduce cell size and to improve low Vcc characteristics. The semiconductor device comprises a gate electrode of a drive transistor formed on the semiconductor substrate, with a first gate insulating film therebetween. A first impurity region is formed on the substrate on opposite sides of the gate electrode of the drive transistor. An insulating film is formed on the entire surface of the substrate and has a contact hole exposing part of the gate electrode of the drive transistor. A semiconductor layer is formed on the insulating film in connection with the gate electrode of the drive transistor through the contact hole; a second gate insulating film is formed on the semiconductor layer; and a gate electrode of an access transistor is formed on the second gate insulating film. Further, a second impurity region is formed in the semiconductor layer on opposite sides of the access transistor gate electrode.