The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Jul. 23, 1997
Applicant:
Inventors:
Chang-Jae Lee, Cheongju-si, KR;
Jae-Jeong Kim, Cheongju-si, KR;
Assignee:
Goldstar Electron Company, Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438307 ; 438301 ; 438585 ;
Abstract
The present invention provides a process for forming an MOS semiconductor device having an LDD structure, which includes a forming a gate electrode by first etching a conductive layer to a certain depth by an RIE process and by second etching the conductive layer by an isotropic plasma etching process. In forming the source/drain of the device, an n.sup.+ source/drain and an n.sup.- source/drain are formed in a sequential manner. The gate line first is formed with its width over-sized compared with its channel length, and finally is formed to its final size.