The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Dec. 27, 1996
Applicant:
Inventor:
Won-Ju Cho, Choongcheongbuk-Do, KR;
Assignee:
LG Semicon Co., Ltd., Choongcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438151 ; 438589 ;
Abstract
A thin film transistor and method include a substrate and a first insulating layer having a trench portion. A first gate is formed on the first insulating layer and a second insulating layer is formed on the first gate. An active layer is formed on the second gate insulating layer and a third insulating layer is formed on the active layer. The second and third insulating layers include a contact hole. A second gate is formed on the third insulating layer and is connected to the first gate through the contact hole.
Cho, Won-Ju. (1998). Thin film transistor and method for making same (U.S. Patent No. 5840601). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5840601
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile