The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Jun. 13, 1997
Applicant:
Inventor:
Stephen Joseph Kovacic, Kanata, CA;
Assignee:
Nothern Telecom Limited, Montreal, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 47 ; 438 46 ;
Abstract
Complementary Modulation-Doped Field-Effect Transistors (CMODFETs) using a heterostructure based on Silicon and Germanium alloys are described. The design of the Si/Si.sub.1-x Ge.sub.x -based CMODFET is also presented and shown to enable both n-channel or p-channel transport between source and drain implantation regions of the carriers with mobilities enhanced by 1) low ionized dopant scattering phenomena and 2) discretization of the free carrier energy due to quantum confinement.