The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Sep. 19, 1997
Applicant:
Inventor:
Takayuki Kubo, Nishinomiya, JP;
Assignee:
Sumitomo Sitix Corporation, Amagasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 20 ; 111 30 ; 111 32 ; 111 33 ; 111932 ;
Abstract
A process of growing crystals in which the uniformity of the oxygen concentration is desirable. In the process, the upper part of the material in the crucible is heated to form a molten layer, and a solid layer is formed at its lower part, then a seed crystal is made to contact the surface of the molten layer, and pulled up to grow a crystal, while characteristically a magnetic field is applied to the molten layer. This method produces single crystals with a uniform distribution of oxygen concentration. Furthermore, this method produces single crystals at low cost and with a high productivity.