The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1998
Filed:
Jan. 10, 1997
Applicant:
Inventors:
Hiroaki Taguchi, Tokyo, JP;
Takashi Atami, Tokyo, JP;
Hisashi Furuya, Tokyo, JP;
Michio Kida, Omiya, JP;
Assignee:
Zag Ltd., Rosh Haayin, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 18 ; 117 19 ; 117 30 ; 117 31 ; 117 33 ;
Abstract
A method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0<t<t1) wherein a single crystal of semiconductor is pulled while a source material is supplied continuously to maintain a constant amount of semiconductor melt, and a step (t2<t<t3) wherein the supply of source material is halted, and the single crystal of semiconductor is pulled using residual melt from the first step.