The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Aug. 01, 1995
Hong Lin, Palo Alto, CA (US);
Long Yang, Union City, CA (US);
Michael R Tan, Menlo Park, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.