The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Sep. 09, 1997
Wen-Chau Liu, Tainan, TW;
Lih-Wen Laih, Tainan, TW;
National Science Council, , TW;
Abstract
The present invention provides a GaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistor which comprises: a substrate of semi-insulated GaAs material; a first layer of non-doped GaAs material, formed on the substrate; a second layer of n-doped GaInAs material, formed on the first layer; a third layer of non-doped GaInP material, formed on the second layer; a fourth layer of n-doped GaAs material, formed on the third layer; an Au layer, formed on the third layer; and an Au/Ge/Ni alloy layer, formed on the fourth layer. An accumulation effect is performed because there is a V-shaped energy band existing in the modulation-compositioned channel. Therefore, the transistor of the present invention is characterized by a large current density, a large gate voltage swing with high transconductance, and a high gate breakdown voltage. The present invention has a good potentiality for high-speed, high-power, and large input signal circuit applications.