The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Jan. 22, 1997
Applicant:
Inventor:
Michinari Yamanaka, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438735 ; 438742 ; 252 792 ;
Abstract
In a dry etching method of aluminum (Al) alloy film comprising the steps of (1) forming an alloy film of which a major component is Al on a semiconductor substrate, (2) forming a resist pattern on the alloy film, and (3) dry etching the alloy film using the resist pattern as a mask with etching gas to which ammonia gas is added, a flow rate of the ammonia gas being set at between not less than half of a flow rate of the etching gas and not more than the flow rate of the etching gas. Improved fine pattern dry etching of Al alloy including Si and Cu is achieved.