The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Dec. 21, 1995
Shuichi Saito, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device in which a first ion implantation is carried out into a semiconductor substrate. Then, a second ion implantation is carried out to a projection range deeper than that of the first ion implantation. The ions of the second implantation are formed from the same type of atoms constituting the semiconductor substrate or from impurity atoms having the same conduction type as the semiconductor substrate at the projection range of the second ion implantation. A further ion implantation may be carried out to electrically shield the second implantation, or the method may be carried out in a SOI substrate with the second implantation extending through the insulating layer of the SOI structure.