The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Jun. 04, 1997
Ichiroh Honma, Tokyo, JP;
Hirohito Watanabe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Used nearer to a MOS transistor (25, 29(1), 29(2)) together with another capacitor electrode (39) with a dielectric film (37) interposed for use in a DRAM, a capacitor electrode is manufactured to include a conductor pole (53) and a tray-shaped conductor layer (55) which is held by the conductor pole and to include a plate portion (57) extended perpendicular to a pole axis and having a plate periphery and a peripheral portion (59) extended parallel to the pole axis from the plate periphery towards a pole end. Preferably, the tray-shaped conductor layer is held by the pole on a plurality of levels. A planar conductor layer may additionally be held at the pole end perpendicular to the pole axis. Word (41) and bit (49) lines are embedded in an insulator layer (43, 51) for the capacitor and the transistor.