The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Sep. 14, 1994
Michiaki Hiyoshi, Yokohama, JP;
Takashi Fujiwara, Yokohama, JP;
Hideo Matsuda, Yokohama, JP;
Satoshi Yanagisawa, Tokyo, JP;
Susumu Iesaka, Tokyo, JP;
Tatuo Harada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by controlling impurity diffusion and having an impurity concentration lower than those of the switching device section and the diode section.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile