The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Oct. 11, 1996
Yasuyuki Hanazawa, Yokohama, JP;
Tomoko Kitazawa, Yokohama, JP;
Yoshihiro Asai, Himeji, JP;
Katsuhiko Inada, Himeji, JP;
Tetsuya Iizuka, Chigasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention relates to the structure of an active matrix type liquid crystal display device in which a channel length of a thin film transistor without increasing resistance of a scanning line region to improve a switching characteristic. A slit is formed at the channel of the thin film transistor formed on the scanning line region. The slit is used as a mask and a pattern of a channel protection film for determining the channel of the thin film transistor is formed by exposure form a back surface of a substrate. According to this method, a desirable channel length can be obtained, and the scanning line region, facing to the channel through the slit, functions as an auxiliary region, so that the resistance of the scanning line region can be reduced.