The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Apr. 18, 1997
Hiroaki Nomura, Suwa, JP;
Yuzuru Sato, Suwa, JP;
Akira Inoue, Suwa, JP;
Takaaki Tanaka, Suwa, JP;
Kenichi Momose, Suwa, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A method of driving a liquid crystal that has a memory capability, wherein a reset voltage is initially applied to the liquid crystal during a reset period, to bring about a Freedericksz transition in the liquid crystal. During a subsequent selection period, a selection voltage that is selected on the basis of a critical value that brings about one of two metastable states in the liquid crystal is applied to the liquid crystal, and, during a non-selection period that follows the selection period, a non-selection voltage that is less than or equal to a threshold value that maintains two metastable states is applied to the liquid crystal. A delay period is provided between the reset period and the selection period, in order to gain effective timing for applying the selection voltage to the liquid crystal after the application of the reset voltage has been turned off. This shortens the length of the selection period, and hence the write time.