Thin film semiconductor device, fabrication method thereof, electronic

Abstract

Electronic devices are provided with electrically conductive interconnections which are formed on the insulator material. Such electronic devices include, for example, thin film semiconductor devices (TFT), metal-insulator-metallic type non-wiring elements (MIM), solar cells, Large Scale Integration devices (LSI) or printed-wiring boards. At least a part of the electrically conductive interconnections are made of .alpha.-structure tantalum (Ta) which contains hydrogen. The .alpha.-structure tantalum does not have cubical crystals in its crystal system, but rather has body-centered cubes (bcc). The resistivity of the .alpha.-structure tantalum is from about 20 .mu..OMEGA. centimeters to about 60 .mu..OMEGA. centimeters. When hydrogen is included within this .alpha.-structure tantalum film, small amounts of nitrogen may be contained along with the hydrogen in the film. When a semiconductor layer is directly formed on the lower conductive layer, the upper conductive layer contains, as a primary component, the hydrogen contained .alpha.-structure tantalum.