The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Aug. 25, 1993
John Edward Cunningham, Lincroft, NJ (US);
Won-Tien Tsang, Holmdel, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of .delta.-doped second semiconductor material in first semiconductor material, with the second material chosen to have a bandgap energy that differs from that of the first material. Exemplarily, in a Be-doped GaAs/AlGaAs structure according to the invention the effective activation energy of the dopant was measured to be about 4 meV, and in conventionally Be-doped GaAs it was measured to be about 19 meV. The invention can be advantageously used to dope III-V and II-VI semiconductors. In some cases it may make possible effective doping of a semiconductor for which prior art techniques are not satisfactory.