The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Mar. 10, 1997
Hiroshi Kawaguchi, Tokyo, JP;
Isami Sakai, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for manufacturing an integrated circuit, wherein, before providing an IC composite by forming a metal film on an IC assembly which includes a semiconductor substrate and a silicon part formed along the substrate and consisting essentially of silicon, an amorphous region is formed into the silicon part. The IC composite is subjected to first primary and secondary heat treatments in a nitrogen atmosphere and then to a second heat treatment at 600.degree.-700.degree. C., 700.degree.-900.degree. C., and 700.degree.-900.degree. C. to turn the metal film on the silicon part into a metal silicide film of excellent uniformity. The assembly has a silicon dioxide portion, on which the metal film is turned during the first primary and secondary heat treatments into a metal nitride film. The second heat treatment is carried out after the removal of the metal nitride film.