The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Nov. 15, 1996
Applicant:
Inventor:
Barry W Benton, Orange, CA (US);
Assignee:
Rosemount Analytical Inc., La Habra, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
204416 ; 204417 ; 257414 ; 257429 ; 257680 ; 438 49 ; 438126 ;
Abstract
An Ion-sensitive Field Effect Transistor (ISFET) sensor for sensing ion activity of a solution includes a substrate and an ISFET semiconductor die. The substrate has front surface exposed to the solution, a back surface opposite to the front surface and aperture extending between the front and back surfaces. The ISPET semiconductor die has an ion-sensitive surface with a gate region. The ion-sensitive surface is mounted to the back surface such that the gate region is exposed to the solution through the aperture.