The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1998
Filed:
Jan. 24, 1997
Milton Birnbaum, Rancho Palo Verdes, CA (US);
Robert D Stultz, Bellflower, CA (US);
Marly B Camargo, Sao Paulo, BR;
Hughes Electronics, El Segundo, CA (US);
Abstract
An eyesafe laser system includes a Q-switch crystal formed of a semiconductor host material having noncentrosymmetric tetrahedral substitutional sites doped with transition metal ions in concentrations from about 0.001 to about 0.10 atomic percent, which functions as to be a saturable absorber of light at eyesafe wavelengths with a relatively long relaxation lifetime. Co.sup.2+ :ZnSe has been demonstrated to have advantageously high absorption cross section and advantageously high relaxation lifetime at both 1.54 .mu.m (Er:glass laser) and 1.6 .mu.m (Er:YAG laser). Other candidate host materials include other zinc chalcogenides, cadmium chalcogenides and zinc oxide. The resultant Q-switch does not require additional focusing optics inside the cavity and has a saturation fluence which is approximately one order of magnitude less than other state of the art saturable absorbers in the 'eyesafe' wavelength region, thereby permitting substantially faster Q-switch bleaching, lower thermal loads, and less potential for damage than was hitherto possible.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile