The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1998
Filed:
Jul. 23, 1996
Applicant:
Inventor:
Atsunobu Kawamoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257784 ; 257288 ; 257328 ;
Abstract
The power MOSFET includes a substrate of the power MOS type FET having a source electrode, a part of which corresponds to a source pad area formed directly thereon. The device also includes a bonding wire for connecting the source electrode to the outside. The bonding wire is melt-bonded on the source pad area by an ultra-sonic vibration having a frequency of about 50 to about 70 kHz.
Kawamoto, Atsunobu. (1998). Power mosfet and method of preparing the same (U.S. Patent No. 5831338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5831338
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile