The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1998
Filed:
Apr. 07, 1997
Wen-Chau Liu, Tainan, TW;
Lih-Wen Laih, Tainan, TW;
National Science Council, Taipei, TW;
Abstract
The present invention provides a structure of a metal-insulator-semiconductor (MIS)-like multiple-negative-differential-resistance (MNDR) device and the fabrication method thereof. The device of the present invention has the characteristics of dual-route and MNDR at low temperatures. These characteristics result from the successive barrier-lowering and potential-redistribution effect when conducting carriers fall into a quantum well. MNDR devices have excellent potential in multiple-value logic circuitry applications and are capable of reducing circuitry complexity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile