The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 1998

Filed:

Mar. 05, 1997
Applicant:
Inventors:

Masanori Kusunoki, Hyogo-ken, JP;

Makoto Tanaka, Kakogawa, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438266 ; 438257 ;
Abstract

Methods of fabricating electrically alterable non-volatile semiconductor memory cells are provided. The methods include the steps of forming consecutively two paris of side walls defined at least partially by a floating gate, a control gate and dielectric layers to which dopant implantation into source region is self-aligned. Using such side walls provides accurate channel lengths of select gate transistors for uniform memory cell characteristics.


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