The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1998
Filed:
Jul. 22, 1996
Saori Kurogane, Higashiosaka, JP;
Hiromi Sakamoto, Kashiba, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A terminal section for anodic oxidation made of a metal which is the same kind of a metal as a light shielding film is formed on an end of a light transmitting substrate. Then, wiring space for the terminal section for anodic oxidation is masked, and a first insulating film, a semiconductor layer and a second insulating film are deposited by the sputtering method or the CVD method, for example. Moreover, an electrically conductive material to be a gate electrode is laminated and patterned on the second insulating film and the terminal section for anodic oxidation so that the wiring space for the terminal section for anodic oxidation is exposed. As a result, the gate electrode which is electrically connected to the terminal section for anodic oxidation is formed. By making wiring in the wiring space for the terminal section for anodic oxidation, the gate electrode is anodically oxidized. With the above method, only the wiring space for the terminal section for anodic oxidation is easily exposed, and the terminal section for anodic oxidation can be electrically connected to the gate electrode. Therefore, with the above method, a number of the processes can be decreased, the process for anodic oxidation can be simplified and cost of production can be reduced. Moreover, a thin film transistor with high reliability can be provided.