The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1998

Filed:

Aug. 15, 1996
Applicant:
Inventor:

Ikuhiro Yokota, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F / ;
U.S. Cl.
CPC ...
364578 ; 364489 ;
Abstract

In a method for simulating parameters including a potential in a semiconductor device, deviations of the parameters are calculated for a plurality of nodes of a mesh in the semiconductor device by Newton's method. However, when absolute values of electric fields are larger than a first value and deviations of the electric fields are larger than a second value, the parameters are renewed by adding values smaller than the deviations of the parameters thereto. Otherwise, the parameters are renewed by adding the deviations of the parameters thereto.


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