The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1998
Filed:
Aug. 24, 1995
Gary W Jones, Poughkeepsie, NY (US);
Steven M Zimmerman, Pleasant Valley, NY (US);
Susan K Schwartz Jones, Poughkeepsie, NY (US);
Michael J Costa, Poughkeepsie, NY (US);
Jeffrey A Silvernail, Kingston, NY (US);
Fed Corporation, Hopewell Junction, NY (US);
Abstract
A microelectronic field emitter device comprising a substrate, a conductive pedestal on said substrate, and an edge emitter electrode on said pedestal, wherein the edge emitter electrode comprises an emitter cap layer having an edge. The invention also contemplates a current limiter for a microelectronic field emitter device, which comprises a semi-insulating material selected from the group consisting of SiO, SiO+Cr (0 to 50% wt.), SiO2+Cr (0 to 50% wt.), SiO+Nb, Al2O3 and SixOyNz sandwiched between an electron injector and a hole injector. Another aspect of the invention relates to a microelectronic field emitter device comprising a substrate, an emitter conductor on such substrate, and a current limiter stack formed on said substrate, such stack having a top and at least one edge, a resistive strap on top of the stack, extending over the edge in electrical contact with the emitter conductor; and an emitter electrode on the current limiter stack over the resistive strap.