The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1998

Filed:

Aug. 20, 1996
Applicant:
Inventor:

Hassan K Bazargan, San Jose, CA (US);

Assignee:

Xilinx, Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
326 81 ; 326 58 ; 326 86 ;
Abstract

A low voltage driver circuit capable of interfacing with a high voltage node. The high voltage tolerant input/output circuit of the present invention has a first stage operating at a low voltage integrated circuit standard and a second stage capable of operating at both the low voltage and a high voltage integrated circuit standard. The second stage operates at high voltage during the tristate mode and at low voltage during an active mode. The second stage uses an output driver having a p-type pull-up transistor coupled to an input/output pad. The input/output pad interfaces with a high voltage or mixed voltage network. An isolator circuit is coupled between the first stage and the second stage for voltage isolation when the second stage is operating at high voltage. A charger circuit maintains the high voltage on a gate of the p-type pull-up transistor during the tristate mode and the low voltage during the active mode. The charger also decreases the voltage on the gate of the p-type pull-up transistor in advance of a transition from the tristate to the active mode. The p-type transistors in the circuit which are exposed to the high voltage have their NWELLs coupled to the high voltage. This configuration prevents the back flow of current from the high voltage network to the second stage and protects the p-type transistors in the circuit from latch up.


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