The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1998

Filed:

Nov. 14, 1995
Applicant:
Inventors:

Shin-ichi Yamagata, Itami, JP;

Kazuya Kamitake, Itami, JP;

Yoshishige Takano, Itami, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257706 ; 257765 ; 257675 ; 257741 ; 257747 ; 257712 ;
Abstract

A material for a semiconductor substrate comprising an aluminum-silicon alloy containing from 50% to 80% by weight of silicon and having a thermal conductivity of 0.28 cal/cm.sec..degree. C. or higher, a coefficient of thermal expansion of 12.times.10.sup.-6 /.degree. C. or smaller and a density of 2.5 g/cm.sup.3 or lower. This material is produced by molding an Al--Si alloy powder, which has been obtained through rapid solidification by atomization, to form a compact and then consolidating the compact by means of forging, sintering, etc. The substrate material may have an Al or Al alloy covering layer at least one surface thereof and, further, as necessary, an insulating or plating layer on the covering layer. The thus obtained substrate material is lightweight and has a suitable coefficient of thermal expansion for a substrate as well as a high thermal conductivity. Therefore, a semiconductor device with high performance and reliability can be obtained using such substrate material.


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