The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1998
Filed:
Nov. 21, 1997
Masaki Katsube, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device having: a semiconductor substrate of a first conductivity type; a well formed in a surface of said semiconductor substrate, the welt being of a second conductivity type opposite to the first conductivity type; a first MOS transistor formed in a surface of a first conductivity type region of the semiconductor substrate; a second MOS transistor formed in a surface of the well; a wiring connected to the gate electrodes of the first and second MOS transistors; and a protection diode with a p-n junction formed in the first conductivity type region and comprising a second conductivity type region electrically connected to the wiring and the first conductivity region of the semiconductor substrate, wherein the wiring and the well are not directly connected electrically. A CMOS type semiconductor integrated circuit device with a long and wide area wiring is realized which can effectively suppress damage to a gate oxide film of a MOSFET.