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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5828084 B1

PDFFull Text
Date of Patent:
Oct. 27, 1998

Filed:

Mar. 27, 1995

High performance poly-sige thin film transistor

Applicant:
Inventors:

Takashi Noguchi, Atsugi, JP;

Rafael Reif, Newton, MA (US);

Julie Tsai, Belmont, MA (US);

Andrew J Tang, Arlington, TX (US);

Assignees:

Sony Corporation, , JP;

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Kananen; Ronald P.

Primary Examiner:

Valencia Martin Wallace

Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 65 ; 257 55 ; 257 66 ;
Abstract

The present invention pertains to a high-performance thin film transistor having a gate and an active region, whose active region comprises a poly-Si.sub.1 -.sub.x Ge.sub.x alloy material and a channel layer of silicon, in which the channel layer of silicon is interposed between the poly-Si.sub.1-x Ge.sub.x alloy material and the gate, and a method for fabricating such a high-performance thin film transistor.

Find Patent Forward Citations

Noguchi, Takashi. (1998). High performance poly-sige thin film transistor (U.S. Patent No. 5828084). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5828084

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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