The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1998
Filed:
Apr. 01, 1996
Applicant:
Inventors:
Liang Choo Hsia, Taipei, TW;
Thomas Tong Chang, Santa Clara, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G03C / ;
U.S. Cl.
CPC ...
438692 ; 438703 ; 438712 ; 438725 ; 438763 ; 438778 ; 438780 ; 430313 ; 430318 ;
Abstract
The surface of an integrated circuit, which uses reactive ion etching to pattern metal interconnection, is protected with two insulating layers on the surface. The first layer is a conventional silicon dioxide. The second layer is a photosensitive polymer which is the same as the material used for subsequent metalization of interconnection using the reactive ion etching technique. When the second layer is used, the reactive ion etching cannot attack the silicon dioxide. A trench can be cut through the two insulating layers, using a window in the photosensitive polymer as a mask, to serve as a via hole for metal to contact the substrate