The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1998
Filed:
Jul. 18, 1996
Nissan Motor Co., Ltd., Kanagawa-ken, JP;
Abstract
A method of manufacturing a semiconductor device by which an element region for electronic circuits or the like is formed on the surface of a semiconductor substrate, a diaphragm region is formed in the bottom surface of the semiconductor substrate, and a plurality of openings having different areas and shapes are formed in the semiconductor substrate. The method includes a step of forming a first diaphragm region in the bottom surface of a semiconductor substrate, a step of partially forming a second diaphragm region in the first diaphragm region, the second diaphragm region being thinner than the first diaphragm region, and a step of forming an opening by removing part or the whole of the second diaphragm region.