The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1998

Filed:

Jul. 28, 1995
Applicant:
Inventors:

Shigeo Akiyama, Tsukuba city, Ibaraki, JP;

Hiroshi Anzai, Fujisawa city, Kanagawa, JP;

Shigeharu Morooka, Fukuoka city, Fukuoka, JP;

Hideaki Maeda, Fukuoka city, Fukuoka, JP;

Katsuki Kusakabe, Fukuoka city, Fukuoka, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D / ; B05D / ;
U.S. Cl.
CPC ...
427243 ; 96 11 ; 427255 ; 4272553 ;
Abstract

A hydrogen separation membrane having a good hydrogen selective permeance and a high stability, without any deterioration, even if exposed to a high temperature atmosphere or steam, which comprises a porous ceramic membrane with SiO.sub.2 deposited and filled into pores on the surface of the membrane and a SiO.sub.2 thin film formed on the surface of the membrane as a hydrogen selectively permeable film is produced by introducing a vaporized SiO.sub.2 source into pores on the surface of a porous ceramic membrane by suction established by providing a pressure difference between both sides of the membrane and thermally decomposing the SiO.sub.2 source, thereby forming, depositing and filling SiO.sub.2 into the pores and fully coating the outer surface of the membrane with a SiO.sub.2 thin film simultaneously where the SiO.sub.2 source is preferably a tetra(lower alkoxy)silane and the deposition of the SiO.sub.2 source is preferably carried out by a chemical vapor deposition process.


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