The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Mar. 17, 1997
Jeng-Jiun Yang, Sunnyvale, CA (US);
Integrated Device Technology, Inc., Santa Clara, CA (US);
Abstract
A barrier layer impedes hydrogen diffusion into polysilicon resistors in circuits in which the resistor resistivity is sensitive to hydrogen diffusion into the resistors. The barrier layer extends laterally throughout the whole integrated circuit except for contact areas in which circuit elements overlying the barrier layer contact conductive elements underlying the barrier layer. The barrier layer includes a layer of polysilicon or amorphous silicon. In some embodiments, the barrier layer includes multiple layers of polysilicon or amorphous silicon that are separated by thin layers of silicon dioxide. In some embodiments, the barrier layer is formed between the polysilicon resistor and PECVD silicon nitride passivation which contains atomic hydrogen.