The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Jun. 11, 1997
Yoshinori Takeuchi, Tokyo, JP;
Koichi Endo, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor IC comprising a supporting substrate; a first buried insulator film formed partially on the supporting substrate; a second buried insulator film thinner than the first buried insulator film formed partially on the supporting substrate; a plurality of island-shaped semiconductor layers formed on the first and second buried insulator films, respectively; and dielectric isolation regions formed between the plurality of island-shaped semiconductor layers. A surge protection circuit is formed in the island-shaped semiconductor layer formed on the second buried insulator film and also an internal circuit is formed in other island-shaped semiconductor layers formed on the first buried insulator film. Surface wirings are disposed to interconnect the surge protection circuit and the internal circuit.