The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Sep. 06, 1995
Applicant:
Inventors:
Jeong Soo Byun, Seoul, KR;
Hyung Jun Kim, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438682 ; 438649 ; 438651 ;
Abstract
A method for forming a silicide layer in a semiconductor device, including the steps of: forming a refractory metal layer on a semiconductor substrate; forming a cobalt layer on the refractory metal layer; implanting impurities in the interface between the refractory metal layer and the cobalt layer; heat treating the semiconductor substrate such that cobalt atoms from the cobalt layer pass through the refractory metal layer and form a cobalt silicide epitaxy layer on the semiconductor substrate; and removing the remaining cobalt layer and the remaining refractory metal layer.