The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Aug. 21, 1997
Hiroyuki Miwa, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A bipolar transistor has a performance and high reliability, which are by enhancing a withstand voltage between an emitter and a base. The bipolar transistor includes a first impurity diffusion layer in a semiconducting substrate, a first conductive film connected to the first diffusion layer, and an opening disposed in the first conductive film. A second impurity diffusion layer is formed in a portion, exposed from the opening portion, of the semiconducting substrate and is connected to the first impurity diffusion layer. A third impurity diffusion layer is formed so as to contain the second diffusion layer and side walls are formed on the side walls of the opening. A fourth impurity diffusion layer is formed in the third impurity diffusion layer in the opening surrounded by the side walls.